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【凝聚态物理-北京大学论坛 2022年第24期(总546期)】Novel materials and devices for the post-Moore era
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主讲人: 吴燕庆 研究员(北京大学信息科学技术学院)
地点: 北京大学物理楼中212报告厅
时间: 2022年11月3日(星期四) 下午3:00-4:30
主持 联系人: 叶堉 ye_yu@pku.edu.cn
主讲人简介: Yanqing Wu obtained PhD in microelectronics from Purdue University in 2009. He then joined IBM T.J. Watson Research Center as a Postdoc and later as Research Staff Member. Since 2012, he joined Huazhong University of Science and Technology as a professor and moved to Peking University in 2019. His main research areas include devices based on novel channel material and dielectric materials for logic, memory and RF applications. He has made contributions in several research areas including III-V FinFETs, 2D logic and RF transistor and oxide semiconductor DRAM. He has published papers in Nature, Nature Materials, Nature Electronics, Nature Nano, and IEEE flagship conference IEDM.

 

As the conventional semiconductor transistor scaling approaches the physical limits of conventional material and device structure, atomic thin channels stacking in the vertical directions such as complementary FET (CFET) are regarded as the future technology route beyond 2 nm node. Moreover, 3D integration becomes more and more important toward low power high efficiency data-centric computing, back-end-of-line (BEOL) compatible transistors for logic and memory applications with high performance and low power face tremendous opportunities and challenges as well. In this talk, material and device progress aiming at the performance and power bottlenecks will be discussed including 2D CFET logic, oxide based capacitorless DRAM and ferroelectric HfO2 memory. The key issues such as the scaling capability, on-state performance and off-state leakage current will be addressed, as well as proof-of-concept circuit demonstrations.